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In situ comparison of the critical current density in $Y Ba_2 Cu_3 O_{7-\delta}$ thin films measured by the screening technique under two criteria

机译:原位比较Y Ba_2 Cu_3中的临界电流密度   O_ {7- \ delta} $薄膜通过两种筛选技术测量   标准

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摘要

In this investigation we report the determination of the critical currentdensity $J_c$ flowing in a$\mathrm{Y}\mathrm{Ba}_2\mathrm{Cu}_3\mathrm{O}_{7-\delta}$ superconductingthin film. Estimation of $J_c$ was carried out by an inductive technique, theso-called screening technique, in which both the imaginary part of thefundamental harmonic of susceptibility $\chi''_1$ and third harmonic voltage$V_3$ criteria were considered for the determination of the full penetrationfield. In order to verify the reliability of this technique under two criteria,we investigated the homogeneity of $J_c$ via transport measurements conductedon four microbridges patterned in the same film. Based on the transport methodwe found that both techniques yield similar results in the determination of$J_c$ for temperatures close to critical temperature $T_c$. However, attemperatures relatively far from $T_c$, the $V_3$ criterion showed a betteragreement with the transport data. Furthermore, using both criteria, we proposea methodology to estimate in situ the coil factor associated with the $V_3$criterion, avoiding in this way the need of implementing an additionaltechnique.
机译:在此调查中,我们报告了在超导薄膜中的\ mathrm {Y} \ mathrm {Ba} _2 \ mathrm {Cu} _3 \ mathrm {O} _ {7- \ delta} $超导薄膜中流动的临界电流密度$ J_c $的确定。 $ J_c $的估算是通过一种感应技术进行的,即所谓的筛选技术,在该技术中,考虑了磁化率的基本谐波的虚部$ \ chi''_ 1 $和三次谐波电压$ V_3 $的确定标准完整的渗透场。为了验证该技术在两个标准下的可靠性,我们通过在同一张胶片上构图的四个微桥上进行的传输测量研究了$ J_c $的均匀性。基于传输方法,我们发现在接近临界温度$ T_c $的温度下确定$ J_c $时,这两种技术都产生相似的结果。但是,在相对于$ T_c $相对较远的温度下,$ V_3 $准则显示出与传输数据的较好一致性。此外,使用这两个标准,我们提出了一种方法来原位估计与$ V_3 $标准相关的线圈系数,从而避免了实施其他技术的需要。

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